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Geometrical enhancement of low-field magnetoresistance in silicon

Author

Listed:
  • Caihua Wan

    (Laboratory of Advanced Materials, Tsinghua University
    Beijing National Center for Electron Microscopy, Tsinghua University)

  • Xiaozhong Zhang

    (Laboratory of Advanced Materials, Tsinghua University
    Beijing National Center for Electron Microscopy, Tsinghua University)

  • Xili Gao

    (Laboratory of Advanced Materials, Tsinghua University
    Beijing National Center for Electron Microscopy, Tsinghua University)

  • Jimin Wang

    (Laboratory of Advanced Materials, Tsinghua University
    Beijing National Center for Electron Microscopy, Tsinghua University)

  • Xinyu Tan

    (Laboratory of Advanced Materials, Tsinghua University
    Beijing National Center for Electron Microscopy, Tsinghua University)

Abstract

Silicon shapes up for magnetoelectronics Some non-magnetic semiconductors have been found to exhibit potentially useful electrical responses to magnetic fields. Such effects, termed inhomogeneity-induced magnetoresistance, occur when the conductivity of the material is not uniform. Wan et al. now show how this phenomenon can be engineered in silicon using the geometry (shape) of the device, leading to enhanced sensitivities that could prove attractive to the magnetic-field-sensing industry.

Suggested Citation

  • Caihua Wan & Xiaozhong Zhang & Xili Gao & Jimin Wang & Xinyu Tan, 2011. "Geometrical enhancement of low-field magnetoresistance in silicon," Nature, Nature, vol. 477(7364), pages 304-307, September.
    • Handle: RePEc:nat:nature:v:477:y:2011:i:7364:d:10.1038_nature10375
    DOI: 10.1038/nature10375
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