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High-frequency, scaled graphene transistors on diamond-like carbon

Author

Listed:
  • Yanqing Wu

    (IBM Thomas J. Watson Research Center)

  • Yu-ming Lin

    (IBM Thomas J. Watson Research Center)

  • Ageeth A. Bol

    (IBM Thomas J. Watson Research Center)

  • Keith A. Jenkins

    (IBM Thomas J. Watson Research Center)

  • Fengnian Xia

    (IBM Thomas J. Watson Research Center)

  • Damon B. Farmer

    (IBM Thomas J. Watson Research Center)

  • Yu Zhu

    (IBM Thomas J. Watson Research Center)

  • Phaedon Avouris

    (IBM Thomas J. Watson Research Center)

Abstract

Diamond standard for graphene transistor Graphene, the one-atom-thick layered form of carbon, shows promise for use in high-frequency microelectronics devices. A team based at the IBM Thomas J. Watson Research Center in New York has now identified a diamond-like form of carbon, which is already well known in the semiconductor industry, as being particularly well suited for use as a substrate for graphene semiconductor devices. Graphene was grown on a copper film substrate by chemical vapour deposition (CVD) and then transferred to a wafer of diamond-like carbon. This was used to produce a high-performance graphene transistor with a cut-off frequency of 155 gigahertz at a gate length of 40 nanometres — the shortest length so far reported. This system not only achieves the highest operation speed so far for CVD-graphene transistors, but also is the smallest well-behaved transistor ever demonstrated on any graphene material.

Suggested Citation

  • Yanqing Wu & Yu-ming Lin & Ageeth A. Bol & Keith A. Jenkins & Fengnian Xia & Damon B. Farmer & Yu Zhu & Phaedon Avouris, 2011. "High-frequency, scaled graphene transistors on diamond-like carbon," Nature, Nature, vol. 472(7341), pages 74-78, April.
    • Handle: RePEc:nat:nature:v:472:y:2011:i:7341:d:10.1038_nature09979
    DOI: 10.1038/nature09979
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