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Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects

Author

Listed:
  • Solomon Assefa

    (IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA)

  • Fengnian Xia

    (IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA)

  • Yurii A. Vlasov

    (IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA)

Abstract

Noise reduction A key element in the integration of microprocessor chips with optical communications circuits is a photodetector to mediate the optical and electronic signals. Germanium photodetectors are very attractive in this regard because they are compatible with conventional silicon circuitry, but they suffer from noise that limits their performance. Assefa et al. now show how the poor intrinsic noise characteristics of germanium can be overcome through the careful engineering of optical and electrical fields at the nanometre scale. The result is a compact and efficient photodetector that could enable a range of optoelectronic applications.

Suggested Citation

  • Solomon Assefa & Fengnian Xia & Yurii A. Vlasov, 2010. "Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects," Nature, Nature, vol. 464(7285), pages 80-84, March.
    • Handle: RePEc:nat:nature:v:464:y:2010:i:7285:d:10.1038_nature08813
    DOI: 10.1038/nature08813
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