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Electrical creation of spin polarization in silicon at room temperature

Author

Listed:
  • Saroj P. Dash

    (MESA+ Institute for Nanotechnology, University of Twente)

  • Sandeep Sharma

    (MESA+ Institute for Nanotechnology, University of Twente)

  • Ram S. Patel

    (MESA+ Institute for Nanotechnology, University of Twente)

  • Michel P. de Jong

    (MESA+ Institute for Nanotechnology, University of Twente)

  • Ron Jansen

    (MESA+ Institute for Nanotechnology, University of Twente)

Abstract

Silicon-based spintronics In spintronics, the electron spin degree of freedom replaces the electron charge, the basic unit of conventional electronics, as the information carrier in future spin-based electronic, data storage and computing technologies. Motivated by the prevalence of silicon in present-day electronics, efforts have been made to realize silicon-based spintronics devices, but so far, successful control of the charge carriers' spin in such devices has been limited to low temperatures and to one type of carrier (electrons) only, thus limiting their technological potential. Now a team at the University of Twente has produced a silicon-based three-terminal device in which they demonstrate the successful room-temperature injection, manipulation and detection of spin polarization of both electrons and their positively charged counterparts known as 'holes'.

Suggested Citation

  • Saroj P. Dash & Sandeep Sharma & Ram S. Patel & Michel P. de Jong & Ron Jansen, 2009. "Electrical creation of spin polarization in silicon at room temperature," Nature, Nature, vol. 462(7272), pages 491-494, November.
    • Handle: RePEc:nat:nature:v:462:y:2009:i:7272:d:10.1038_nature08570
    DOI: 10.1038/nature08570
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