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Large positive magnetoresistive effect in silicon induced by the space-charge effect

Author

Listed:
  • Michael P. Delmo

    (Institute for Chemical Research,)

  • Shinpei Yamamoto

    (Institute for Integrated Cell-Material Sciences, Kyoto University, Uji 611-0011, Japan)

  • Shinya Kasai

    (Institute for Chemical Research,)

  • Teruo Ono

    (Institute for Chemical Research,)

  • Kensuke Kobayashi

    (Institute for Chemical Research,)

Abstract

Silicon can still surprise Silicon-based electronics components are everywhere, so by now silicon device technology is one of the most highly evolved of fields. But as a report from the labs of Kyoto University demonstrates, surprising basic effects in silicon can still be observed. A simple device based on lightly doped silicon held between two non-magnetic metallic contacts shows a remarkably large magnetoresistance — the dependence of electrical resistance on magnetic field — of over 1,000% at room temperature. This is comparable to the 'colossal' magnetoresistance found in certain magnetic systems, although the underlying mechanism is very different, in the case of silicon appearing to derive from the space-charge effect. The observed magnetoresistance effect could be utilized to develop new magnetic devices based on silicon.

Suggested Citation

  • Michael P. Delmo & Shinpei Yamamoto & Shinya Kasai & Teruo Ono & Kensuke Kobayashi, 2009. "Large positive magnetoresistive effect in silicon induced by the space-charge effect," Nature, Nature, vol. 457(7233), pages 1112-1115, February.
    • Handle: RePEc:nat:nature:v:457:y:2009:i:7233:d:10.1038_nature07711
    DOI: 10.1038/nature07711
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