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A high-mobility electron-transporting polymer for printed transistors

Author

Listed:
  • He Yan

    (Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA)

  • Zhihua Chen

    (Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA)

  • Yan Zheng

    (Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA)

  • Christopher Newman

    (Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA)

  • Jordan R. Quinn

    (Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA)

  • Florian Dötz

    (BASF Global Research Center Singapore, Science Park Road 61, Singapore 112575)

  • Marcel Kastler

    (BASF SE, GKS/E-B001, 67056 Ludwigshafen, Germany)

  • Antonio Facchetti

    (Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA)

Abstract

Printed electronics is a revolutionary technology aimed at unconventional electronic device manufacture on plastic foils, and will probably rely on polymeric semiconductors for organic thin-film transistor (OTFT) fabrication. In addition to having excellent charge-transport characteristics in ambient conditions, such materials must meet other key requirements, such as chemical stability, large solubility in common solvents, and inexpensive solution and/or low-temperature processing. Furthermore, compatibility of both p-channel (hole-transporting) and n-channel (electron-transporting) semiconductors with a single combination of gate dielectric and contact materials is highly desirable to enable powerful complementary circuit technologies, where p- and n-channel OTFTs operate in concert. Polymeric complementary circuits operating in ambient conditions are currently difficult to realize: although excellent p-channel polymers are widely available, the achievement of high-performance n-channel polymers is more challenging. Here we report a highly soluble (∼60 g l-1) and printable n-channel polymer exhibiting unprecedented OTFT characteristics (electron mobilities up to ∼0.45–0.85 cm2 V-1 s-1) under ambient conditions in combination with Au contacts and various polymeric dielectrics. Several top-gate OTFTs on plastic substrates were fabricated with the semiconductor-dielectric layers deposited by spin-coating as well as by gravure, flexographic and inkjet printing, demonstrating great processing versatility. Finally, all-printed polymeric complementary inverters (with gain 25–65) have been demonstrated.

Suggested Citation

  • He Yan & Zhihua Chen & Yan Zheng & Christopher Newman & Jordan R. Quinn & Florian Dötz & Marcel Kastler & Antonio Facchetti, 2009. "A high-mobility electron-transporting polymer for printed transistors," Nature, Nature, vol. 457(7230), pages 679-686, February.
    • Handle: RePEc:nat:nature:v:457:y:2009:i:7230:d:10.1038_nature07727
    DOI: 10.1038/nature07727
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    Cited by:

    1. Yinan Huang & Kunjie Wu & Yajing Sun & Yongxu Hu & Zhongwu Wang & Liqian Yuan & Shuguang Wang & Deyang Ji & Xiaotao Zhang & Huanli Dong & Zhongmiao Gong & Zhiyun Li & Xuefei Weng & Rong Huang & Yi Cui, 2024. "Unraveling the crucial role of trace oxygen in organic semiconductors," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

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