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Nanoscale holographic interferometry for strain measurements in electronic devices

Author

Listed:
  • Martin Hÿtch

    (CEMES-CNRS, nMat Group, 29 rue Jeanne Marvig, 31055 Toulouse, France)

  • Florent Houdellier

    (CEMES-CNRS, nMat Group, 29 rue Jeanne Marvig, 31055 Toulouse, France)

  • Florian Hüe

    (CEMES-CNRS, nMat Group, 29 rue Jeanne Marvig, 31055 Toulouse, France)

  • Etienne Snoeck

    (CEMES-CNRS, nMat Group, 29 rue Jeanne Marvig, 31055 Toulouse, France)

Abstract

Silicon electronics: Nanoscale strain measurement Placing silicon under strain can enhance the movement of charge carriers through the semiconductor, so little wonder that strain is now engineered into the latest high-performance silicon devices. What has been lacking, however, is a versatile tool for measuring (and hence understanding) the complex strain distributions produced in such devices. A group working at the Center for Material Elaboration and Structural Studies in Toulouse has developed a new approach that incorporates two well known techniques — moiré interferometry and electron holography — to measure strain at the nanoscale. The new method achieves high spatial resolution and precision with a large field of view, overcoming most of the limitations of existing methods.

Suggested Citation

  • Martin Hÿtch & Florent Houdellier & Florian Hüe & Etienne Snoeck, 2008. "Nanoscale holographic interferometry for strain measurements in electronic devices," Nature, Nature, vol. 453(7198), pages 1086-1089, June.
    • Handle: RePEc:nat:nature:v:453:y:2008:i:7198:d:10.1038_nature07049
    DOI: 10.1038/nature07049
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