Author
Listed:
- Jonathan E. Green
(Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech)
- Jang Wook Choi
(Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech)
- Akram Boukai
(Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech)
- Yuri Bunimovich
(Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech)
- Ezekiel Johnston-Halperin
(Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech
Ohio State University)
- Erica DeIonno
(Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech)
- Yi Luo
(Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech
Carnegie Mellon University)
- Bonnie A. Sheriff
(Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech)
- Ke Xu
(Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech)
- Young Shik Shin
(Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech)
- Hsian-Rong Tseng
(University of California at Los Angeles
University of California)
- J. Fraser Stoddart
(University of California at Los Angeles)
- James R. Heath
(Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech)
Abstract
Molecular memory The miniaturization of integrated circuits could stall in 20 years or so, when current technologies will scale down no further. Miniaturization beyond that point might be possible with DRAMs (dynamic random access memories, a concept derived from molecular electronics), the use of nanowires, and defect-tolerant architectures. Small, error-tolerant memory circuits combining these features have already been demonstrated, but this approach moves to another level with the development of a 160,000-bit molecular electronic memory, roughly analogous to a projected 'year 2020' DRAM circuit. The circuit still has large numbers of non-working memory bits, but they are readily identified and isolated; the working bits can then be configured as a fully functional random access memory. In a News Feature, Philip Ball looks at the computer architectures needed to exploit hyper-dense molecular memories.
Suggested Citation
Jonathan E. Green & Jang Wook Choi & Akram Boukai & Yuri Bunimovich & Ezekiel Johnston-Halperin & Erica DeIonno & Yi Luo & Bonnie A. Sheriff & Ke Xu & Young Shik Shin & Hsian-Rong Tseng & J. Fraser St, 2007.
"A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre,"
Nature, Nature, vol. 445(7126), pages 414-417, January.
Handle:
RePEc:nat:nature:v:445:y:2007:i:7126:d:10.1038_nature05462
DOI: 10.1038/nature05462
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