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Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions

Author

Listed:
  • Dale Kitchen

    (Princeton University
    University of Illinois at Urbana-Champaign)

  • Anthony Richardella

    (Princeton University
    University of Illinois at Urbana-Champaign)

  • Jian-Ming Tang

    (University of Iowa)

  • Michael E. Flatté

    (University of Iowa)

  • Ali Yazdani

    (Princeton University)

Abstract

Spintronics at the atomic level The addition of metals as 'dopants to semiconductors is used to adjust the electronic properties of transistors and diodes. A new study uses atomically precise substitution of individual dopants to measure their interactions on the nanometre scale. The discovery of ferromagnetism in manganese-doped gallium arsenide sparked interest in semiconductors based on electron spin, or spintronics. This study uses scanning tunnelling microscopy to visualize the GaAs electronic states involved in Mn–Mn interactions. A strong dependence of ferromagnetic interaction on crystal orientation is seen, a property that might be exploited by growing oriented structures with ferromagnetic transition temperatures beyond those of randomly doped samples. This could also lead to coupled quantum bits for memory or information processing. Cover graphic: Mn hole states visualized on a GaAs surface mediate magnetic interactions between spin states.

Suggested Citation

  • Dale Kitchen & Anthony Richardella & Jian-Ming Tang & Michael E. Flatté & Ali Yazdani, 2006. "Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions," Nature, Nature, vol. 442(7101), pages 436-439, July.
    • Handle: RePEc:nat:nature:v:442:y:2006:i:7101:d:10.1038_nature04971
    DOI: 10.1038/nature04971
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