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Ge/Si nanowire heterostructures as high-performance field-effect transistors

Author

Listed:
  • Jie Xiang

    (Department of Chemistry and Chemical Biology)

  • Wei Lu

    (Department of Chemistry and Chemical Biology)

  • Yongjie Hu

    (Department of Chemistry and Chemical Biology)

  • Yue Wu

    (Department of Chemistry and Chemical Biology)

  • Hao Yan

    (Department of Chemistry and Chemical Biology)

  • Charles M. Lieber

    (Department of Chemistry and Chemical Biology
    Harvard University)

Abstract

Outperforming silicon Field-effect transistors (FETs) based on semi-conductor nanowires could one day replace standard silicon MOSFETs in miniature electronic circuits. MOSFETs, or metal-oxide semiconductor field-effect transistors, are a type of transistor used for high-speed switching and in a computer's integrated circuits. A specially designed nanowire with a germanium shell and silicon core has shown promise as a nanometre-scale field-effect transistor: it has a near-perfect channel for electronic conduction. Now, in transistor configuration, this germanium/silicon nanowire is shown to have properties including high conductance and short switching time delay that are better than state-of-the-art silicon MOSFETs.

Suggested Citation

  • Jie Xiang & Wei Lu & Yongjie Hu & Yue Wu & Hao Yan & Charles M. Lieber, 2006. "Ge/Si nanowire heterostructures as high-performance field-effect transistors," Nature, Nature, vol. 441(7092), pages 489-493, May.
    • Handle: RePEc:nat:nature:v:441:y:2006:i:7092:d:10.1038_nature04796
    DOI: 10.1038/nature04796
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