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Strained silicon as a new electro-optic material

Author

Listed:
  • Rune S. Jacobsen

    (Nano·DTU, Technical University of Denmark)

  • Karin N. Andersen

    (Nano·DTU, Technical University of Denmark
    MIC, Building 345E, Technical University of Denmark
    iNANO and IFA, University of Aarhus, Ny Munkegade, Building 1520)

  • Peter I. Borel

    (Nano·DTU, Technical University of Denmark)

  • Jacob Fage-Pedersen

    (Nano·DTU, Technical University of Denmark)

  • Lars H. Frandsen

    (Nano·DTU, Technical University of Denmark)

  • Ole Hansen

    (Nano·DTU, Technical University of Denmark)

  • Martin Kristensen

    (Nano·DTU, Technical University of Denmark
    MIC, Building 345E, Technical University of Denmark
    iNANO and IFA, University of Aarhus, Ny Munkegade, Building 1520)

  • Andrei V. Lavrinenko

    (Nano·DTU, Technical University of Denmark)

  • Gaid Moulin

    (Nano·DTU, Technical University of Denmark)

  • Haiyan Ou

    (Nano·DTU, Technical University of Denmark)

  • Christophe Peucheret

    (Nano·DTU, Technical University of Denmark)

  • Beáta Zsigri

    (Nano·DTU, Technical University of Denmark)

  • Anders Bjarklev

    (Nano·DTU, Technical University of Denmark)

Abstract

Straining at the leash Silicon is by far the best material available for making electronic components, and much effort has been expended on persuading this reluctant light carrier to carry light. If achieved, this would be a major boost to photonics and optoelectronics. Now a group working at Nano·DTU and other Danish research centres has discovered that a significant electro-optical effect can be induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top of a silicon waveguide. If strained silicon is the answer to the ‘silicon problem’, it could potentially remove the bottleneck in modern computers by rplacing electronic components with much faster optical alternatives.

Suggested Citation

  • Rune S. Jacobsen & Karin N. Andersen & Peter I. Borel & Jacob Fage-Pedersen & Lars H. Frandsen & Ole Hansen & Martin Kristensen & Andrei V. Lavrinenko & Gaid Moulin & Haiyan Ou & Christophe Peucheret , 2006. "Strained silicon as a new electro-optic material," Nature, Nature, vol. 441(7090), pages 199-202, May.
    • Handle: RePEc:nat:nature:v:441:y:2006:i:7090:d:10.1038_nature04706
    DOI: 10.1038/nature04706
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