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Lanthanum-substituted bismuth titanate for use in non-volatile memories

Author

Listed:
  • B. H. Park

    (Seoul National University)

  • B. S. Kang

    (Seoul National University)

  • S. D. Bu

    (Seoul National University)

  • T. W. Noh

    (Seoul National University)

  • J. Lee

    (Sung Kyun Kwan University)

  • W. Jo

    (LG Corporate Institute of Technology)

Abstract

Non-volatile memory devices are so named because they retain information when power is interrupted; thus they are important computer components. In this context, there has been considerable recent interest1,2 in developing non-volatile memories that use ferroelectric thin films—‘ferroelectric random access memories’, or FRAMs—in which information is stored in the polarization state of the ferroelectric material. To realize a practical FRAM, the thin films should satisfy the following criteria: compatibility with existing dynamic random access memory technologies, large remnant polarization (Pr) and reliable polarization-cycling characteristics. Early work focused on lead zirconate titanate (PZT) but, when films of this material were grown on metal electrodes, they generally suffered from a reduction of Pr (‘fatigue’) with polarity switching. Strontium bismuth tantalate (SBT) and related oxides have been proposed to overcome the fatigue problem3, but such materials have other shortcomings, such as a high deposition temperature. Here we show that lanthanum-substituted bismuth titanate thin films provide a promising alternative for FRAM applications. The films are fatigue-free on metal electrodes, they can be deposited at temperatures of ∼650 °C and their values of Pr are larger than those of the SBT films.

Suggested Citation

  • B. H. Park & B. S. Kang & S. D. Bu & T. W. Noh & J. Lee & W. Jo, 1999. "Lanthanum-substituted bismuth titanate for use in non-volatile memories," Nature, Nature, vol. 401(6754), pages 682-684, October.
    • Handle: RePEc:nat:nature:v:401:y:1999:i:6754:d:10.1038_44352
    DOI: 10.1038/44352
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    1. Ziwen Zhou & Shun Wang & Zhou Zhou & Yiqi Hu & Qiankun Li & Jinshuo Xue & Zhijian Feng & Qingyu Yan & Zhongshen Luo & Yuyan Weng & Rujun Tang & Xiaodong Su & Fengang Zheng & Kazuki Okamoto & Hiroshi F, 2023. "Unconventional polarization fatigue in van der Waals layered ferroelectric ionic conductor CuInP2S6," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    2. Chao Zhou & Yanpeng Feng & Liyang Ma & Haoliang Huang & Yangyang Si & Hailin Wang & Sizhe Huang & Jingxuan Li & Chang-Yang Kuo & Sujit Das & Yunlong Tang & Shi Liu & Zuhuang Chen, 2025. "Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design," Nature Communications, Nature, vol. 16(1), pages 1-9, December.
    3. Xiaolei Wang & Zixuan Shang & Chen Zhang & Jiaqian Kang & Tao Liu & Xueyun Wang & Siliang Chen & Haoliang Liu & Wei Tang & Yu-Jia Zeng & Jianfeng Guo & Zhihai Cheng & Lei Liu & Dong Pan & Shucheng Ton, 2023. "Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    4. Song Zhou & Shulin Zhong & Songge Zhang & Lei Liao & Siyuan Huang & Ze Zhang & Dongfeng Zheng & Na Li & Hua Yu & Chuangye Song & Xuedong Bai & Guangyu Zhang & Yunhao Lu & Kehui Wu, 2026. "Templated perpendicular ferroelectricity in textured Aurivillius oxide-based thin films," Nature Communications, Nature, vol. 17(1), pages 1-10, December.

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