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Localization of light in a disordered medium

Author

Listed:
  • Diederik S. Wiersma

    (European Laboratory for Non-Linear Spectroscopy)

  • Paolo Bartolini

    (European Laboratory for Non-Linear Spectroscopy)

  • Ad Lagendijk

    (Van der Waals-Zeeman Laboratory)

  • Roberto Righini

    (European Laboratory for Non-Linear Spectroscopy)

Abstract

Among the unusual transport properties predicted for disordered materials is the Anderson localization1 phenomenon. This is a disorder-induced phase transition in the electron-transport behaviour from the classical diffusion regime, in which the well-known Ohm's law holds, to a localized state in which the material behaves as an insulator. The effect finds its origin in the interference of electrons that have undergone multiple scattering by defects in the solid2,3,4,5,6,7,8,9,10. A similar phenomenon is anticipated for multiple scattering of electromagnetic waves, but with one important simplification: unlike electrons, photons do not interact with one another. This makes transport of photons in disordered materials an ideal model system in which to study Anderson localization10,11,12,13,14,15,16,17. Here we report direct experimental evidence for Anderson localization of light in optical experiments performed on very strongly scattering semiconductor powders.

Suggested Citation

  • Diederik S. Wiersma & Paolo Bartolini & Ad Lagendijk & Roberto Righini, 1997. "Localization of light in a disordered medium," Nature, Nature, vol. 390(6661), pages 671-673, December.
    • Handle: RePEc:nat:nature:v:390:y:1997:i:6661:d:10.1038_37757
    DOI: 10.1038/37757
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