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Enhanced stability and efficiency in hole-transport-layer-free CsSnI3 perovskite photovoltaics

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Listed:
  • K. P. Marshall

    (University of Warwick)

  • M. Walker

    (University of Warwick)

  • R. I. Walton

    (University of Warwick)

  • R. A. Hatton

    (University of Warwick)

Abstract

Photovoltaics based on tin halide perovskites have not yet benefited from the same intensive research effort that has propelled lead perovskite photovoltaics to >20% power conversion efficiency, due to the susceptibility of tin perovskites to oxidation, the low energy of defect formation and the difficultly in forming pinhole-free films. Here we report CsSnI3 perovskite photovoltaic devices without a hole-selective interfacial layer that exhibit a stability ∼10 times greater than devices with the same architecture using methylammonium lead iodide perovskite, and the highest efficiency to date for a CsSnI3 photovoltaic: 3.56%. The latter largely results from a high device fill factor, achieved using a strategy that removes the need for an electron-blocking layer or an additional processing step to minimize the pinhole density in the perovskite film, based on co-depositing the perovskite precursors with SnCl2. These two findings raise the prospect that this class of lead-free perovskite photovoltaic may yet prove viable for applications.

Suggested Citation

  • K. P. Marshall & M. Walker & R. I. Walton & R. A. Hatton, 2016. "Enhanced stability and efficiency in hole-transport-layer-free CsSnI3 perovskite photovoltaics," Nature Energy, Nature, vol. 1(12), pages 1-9, December.
  • Handle: RePEc:nat:natene:v:1:y:2016:i:12:d:10.1038_nenergy.2016.178
    DOI: 10.1038/nenergy.2016.178
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    Cited by:

    1. Syed Afaq Ali Shah & Muhammad Hassan Sayyad & Karim Khan & Kai Guo & Fei Shen & Jinghua Sun & Ayesha Khan Tareen & Yubin Gong & Zhongyi Guo, 2020. "Progress towards High-Efficiency and Stable Tin-Based Perovskite Solar Cells," Energies, MDPI, vol. 13(19), pages 1-42, September.
    2. Cuili Gai & Jigang Wang & Yongsheng Wang & Junming Li, 2019. "The Low-Dimensional Three-Dimensional Tin Halide Perovskite: Film Characterization and Device Performance," Energies, MDPI, vol. 13(1), pages 1-26, December.

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