Author
Listed:
- Chunxu Xiang
(Nanjing University of Posts and Telecommunications, State Key Laboratory of Flexible Electronics, Institute of Advanced Materials)
- Mingjun Yuan
(Nanjing University of Posts and Telecommunications, State Key Laboratory of Flexible Electronics, Institute of Advanced Materials)
- Chuan’an Ding
(Nanjing University of Posts and Telecommunications, State Key Laboratory of Flexible Electronics, Institute of Advanced Materials)
- Yuanyuan Zheng
(Nanjing University of Posts and Telecommunications, State Key Laboratory of Flexible Electronics, Institute of Advanced Materials)
- Yize Li
(Nanjing University of Posts and Telecommunications, State Key Laboratory of Flexible Electronics, Institute of Advanced Materials)
- Xiaole Hu
(Chinese Academy of Sciences, Center for Photonics Information and Energy Materials, Shenzhen Institute of Advanced Technology)
- Jie Zhang
(Chinese Academy of Sciences, Center for Photonics Information and Energy Materials, Shenzhen Institute of Advanced Technology)
- Xinyu Li
(Nanjing University of Posts and Telecommunications, State Key Laboratory of Flexible Electronics, Institute of Advanced Materials)
- Chengfeng Ma
(Nanjing University of Posts and Telecommunications, State Key Laboratory of Flexible Electronics, Institute of Advanced Materials)
- Shaoying Wang
(Nanjing University of Posts and Telecommunications, State Key Laboratory of Flexible Electronics, Institute of Advanced Materials)
- Weibo Yan
(Nanjing University of Posts and Telecommunications, State Key Laboratory of Flexible Electronics, Institute of Advanced Materials)
- Chunlei Yang
(Chinese Academy of Sciences, Center for Photonics Information and Energy Materials, Shenzhen Institute of Advanced Technology)
- Wei Huang
(Nanjing University of Posts and Telecommunications, State Key Laboratory of Flexible Electronics, Institute of Advanced Materials)
- Hao Xin
(Nanjing University of Posts and Telecommunications, State Key Laboratory of Flexible Electronics, Institute of Advanced Materials)
Abstract
Solution processing has great advantages for emerging thin-film solar cells but remains a big challenge for multielemental inorganic films due to complicated phase evolution and grain growth during crystallization. Here we report the fabrication of uniform, large-area Cu2ZnSn(S,Se)4 (CZTSSe) films and solar modules from solution. By tuning the thiourea/metal ratio to increase film porosity—thereby promoting more uniform vertical reaction and lateral grain growth—we improved the uniformity of CZTSSe films and achieved a single-cell efficiency of 13.4% and a solar module efficiency of 8.91%. We further optimized the module structure to reduce non-ideal contact and patterning-induced shunt and resistive losses, resulting in a champion CZTSSe module with a National Renewable Energy Laboratory-certified efficiency of 10.1%. This module also exhibits the lowest cell-to-module loss in open circuit voltage and current density among state-of-the-art emerging thin-film solar modules. Our work demonstrates the viability of solution processing to deposit uniform, large-area CZTSSe film and efficient solar modules, advancing the development of the technology.
Suggested Citation
Chunxu Xiang & Mingjun Yuan & Chuan’an Ding & Yuanyuan Zheng & Yize Li & Xiaole Hu & Jie Zhang & Xinyu Li & Chengfeng Ma & Shaoying Wang & Weibo Yan & Chunlei Yang & Wei Huang & Hao Xin, 2025.
"Solution-processed kesterite solar module with 10.1% certified efficiency,"
Nature Energy, Nature, vol. 10(11), pages 1315-1322, November.
Handle:
RePEc:nat:natene:v:10:y:2025:i:11:d:10.1038_s41560-025-01860-3
DOI: 10.1038/s41560-025-01860-3
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