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Energy level tuned indium arsenide colloidal quantum dot films for efficient photovoltaics

Author

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  • Jung Hoon Song

    (Korea Institute of Machinery and Materials)

  • Hyekyoung Choi

    (Korea Institute of Machinery and Materials)

  • Hien Thu Pham

    (Korea Institute of Machinery and Materials)

  • Sohee Jeong

    (Korea Institute of Machinery and Materials
    Korea University of Science and Technology (UST))

Abstract

We introduce indium arsenide colloidal quantum dot films for photovoltaic devices, fabricated by two-step surface modification. Native ligands and unwanted oxides on the surface are peeled off followed by passivating with incoming atomic or short ligands. The near-infrared-absorbing n-type indium arsenide colloidal quantum dot films can be tuned in energy-level positions up to 0.4 eV depending on the surface chemistry, and consequently, they boost collection efficiency when used in various emerging solar cells. As an example, we demonstrate p–n junction between n-type indium arsenide and p-type lead sulfide colloidal quantum dot layers, which leads to a favorable electronic band alignment and charge extraction from both colloidal quantum dot layers. A certified power conversion efficiency of 7.92% is achieved without additionally supporting carrier transport layers. This study provides richer materials to explore for high-efficiency emerging photovoltaics and will broaden research interest for various optoelectronic applications using the n-type covalent nanocrystal arrays.

Suggested Citation

  • Jung Hoon Song & Hyekyoung Choi & Hien Thu Pham & Sohee Jeong, 2018. "Energy level tuned indium arsenide colloidal quantum dot films for efficient photovoltaics," Nature Communications, Nature, vol. 9(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-06399-4
    DOI: 10.1038/s41467-018-06399-4
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    Cited by:

    1. Yeongho Choi & Donghyo Hahm & Wan Ki Bae & Jaehoon Lim, 2023. "Heteroepitaxial chemistry of zinc chalcogenides on InP nanocrystals for defect-free interfaces with atomic uniformity," Nature Communications, Nature, vol. 14(1), pages 1-11, December.

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