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Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

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  • S. D. Liles

    (University of New South Wales)

  • R. Li

    (University of New South Wales
    TU Delft)

  • C. H. Yang

    (The University of New South Wales)

  • F. E. Hudson

    (The University of New South Wales)

  • M. Veldhorst

    (TU Delft
    The University of New South Wales)

  • A. S. Dzurak

    (The University of New South Wales)

  • A. R. Hamilton

    (University of New South Wales)

Abstract

Valence band holes confined in silicon quantum dots are attracting significant attention for use as spin qubits. However, experimental studies of single-hole spins have been hindered by challenges in fabrication and stability of devices capable of confining a single hole. To fully utilize hole spins as qubits, it is crucial to have a detailed understanding of the spin and orbital states. Here we show a planar silicon metal-oxide-semiconductor-based quantum dot device and demonstrate operation down to the last hole. Magneto-spectroscopy studies show magic number shell filling consistent with the Fock–Darwin states of a circular two-dimensional quantum dot, with the spin filling sequence of the first six holes consistent with Hund’s rule. Next, we use pulse-bias spectroscopy to determine that the orbital spectrum is heavily influenced by the strong hole–hole interactions. These results provide a path towards scalable silicon hole-spin qubits.

Suggested Citation

  • S. D. Liles & R. Li & C. H. Yang & F. E. Hudson & M. Veldhorst & A. S. Dzurak & A. R. Hamilton, 2018. "Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot," Nature Communications, Nature, vol. 9(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-05700-9
    DOI: 10.1038/s41467-018-05700-9
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