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Abnormal band bowing effects in phase instability crossover region of GaSe1-xTe x nanomaterials

Author

Listed:
  • Hui Cai

    (Arizona State University)

  • Bin Chen

    (Arizona State University)

  • Mark Blei

    (Arizona State University)

  • Shery L. Y. Chang

    (Arizona State University)

  • Kedi Wu

    (Arizona State University)

  • Houlong Zhuang

    (Arizona State University)

  • Sefaattin Tongay

    (Arizona State University)

Abstract

Akin to the enormous number of discoveries made through traditional semiconductor alloys, alloying selected 2D semiconductors enables engineering of their electronic structure for a wide range of new applications. 2D alloys have been demonstrated when two components crystallized in the same phase, and their bandgaps displayed predictable monotonic variation. By stabilizing previously unobserved compositions and phases of GaSe1−xTe x at nanoscales on GaAs(111), we demonstrate abnormal band bowing effects and phase instability region when components crystallize in different phases. Advanced microscopy and spectroscopy measurements show as tellurium is alloyed into GaSe, nanostructures undergo hexagonal to monoclinic and isotropic to anisotropic transition. There exists an instability region (0.56

Suggested Citation

  • Hui Cai & Bin Chen & Mark Blei & Shery L. Y. Chang & Kedi Wu & Houlong Zhuang & Sefaattin Tongay, 2018. "Abnormal band bowing effects in phase instability crossover region of GaSe1-xTe x nanomaterials," Nature Communications, Nature, vol. 9(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-04328-z
    DOI: 10.1038/s41467-018-04328-z
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