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Optical charge state control of spin defects in 4H-SiC

Author

Listed:
  • Gary Wolfowicz

    (University of Chicago
    WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University)

  • Christopher P. Anderson

    (University of Chicago
    University of Chicago)

  • Andrew L. Yeats

    (University of Chicago
    Institute for Molecular Engineering and Materials Science Division, Argonne National Laboratory)

  • Samuel J. Whiteley

    (University of Chicago
    University of Chicago)

  • Jens Niklas

    (Chemical Sciences and Engineering Division, Argonne National Laboratory)

  • Oleg G. Poluektov

    (Chemical Sciences and Engineering Division, Argonne National Laboratory)

  • F. Joseph Heremans

    (University of Chicago
    Institute for Molecular Engineering and Materials Science Division, Argonne National Laboratory)

  • David D. Awschalom

    (University of Chicago
    Institute for Molecular Engineering and Materials Science Division, Argonne National Laboratory)

Abstract

Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy and silicon vacancy, obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from divacancy ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading the electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the charge state populations. We develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC.

Suggested Citation

  • Gary Wolfowicz & Christopher P. Anderson & Andrew L. Yeats & Samuel J. Whiteley & Jens Niklas & Oleg G. Poluektov & F. Joseph Heremans & David D. Awschalom, 2017. "Optical charge state control of spin defects in 4H-SiC," Nature Communications, Nature, vol. 8(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_s41467-017-01993-4
    DOI: 10.1038/s41467-017-01993-4
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    Cited by:

    1. Cunzhi Zhang & Francois Gygi & Giulia Galli, 2023. "Engineering the formation of spin-defects from first principles," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    2. Elizabeth M. Y. Lee & Alvin Yu & Juan J. de Pablo & Giulia Galli, 2021. "Stability and molecular pathways to the formation of spin defects in silicon carbide," Nature Communications, Nature, vol. 12(1), pages 1-8, December.

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