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Physical origins of current and temperature controlled negative differential resistances in NbO2

Author

Listed:
  • Suhas Kumar

    (Hewlett Packard Labs)

  • Ziwen Wang

    (Stanford University)

  • Noraica Davila

    (Hewlett Packard Labs)

  • Niru Kumari

    (Hewlett Packard Labs)

  • Kate J. Norris

    (Hewlett Packard Labs)

  • Xiaopeng Huang

    (Hewlett Packard Labs)

  • John Paul Strachan

    (Hewlett Packard Labs)

  • David Vine

    (Lawrence Berkeley National Laboratory)

  • A.L. David Kilcoyne

    (Lawrence Berkeley National Laboratory)

  • Yoshio Nishi

    (Stanford University)

  • R. Stanley Williams

    (Hewlett Packard Labs)

Abstract

Negative differential resistance behavior in oxide memristors, especially those using NbO2, is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a relatively low-temperature non-linear transport mechanism or a high-temperature Mott transition. Resolving this issue will enable consistent and robust predictive modeling of this phenomenon for different applications. Here we examine NbO2 memristors that exhibit both a current-controlled and a temperature-controlled negative differential resistance. Through thermal and chemical spectromicroscopy and numerical simulations, we confirm that the former is caused by a ~400 K non-linear-transport-driven instability and the latter is caused by the ~1000 K Mott metal-insulator transition, for which the thermal conductance counter-intuitively decreases in the metallic state relative to the insulating state.

Suggested Citation

  • Suhas Kumar & Ziwen Wang & Noraica Davila & Niru Kumari & Kate J. Norris & Xiaopeng Huang & John Paul Strachan & David Vine & A.L. David Kilcoyne & Yoshio Nishi & R. Stanley Williams, 2017. "Physical origins of current and temperature controlled negative differential resistances in NbO2," Nature Communications, Nature, vol. 8(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_s41467-017-00773-4
    DOI: 10.1038/s41467-017-00773-4
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    Cited by:

    1. Hakseung Rhee & Gwangmin Kim & Hanchan Song & Woojoon Park & Do Hoon Kim & Jae Hyun In & Younghyun Lee & Kyung Min Kim, 2023. "Probabilistic computing with NbOx metal-insulator transition-based self-oscillatory pbit," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    2. Ke Yang & Yanghao Wang & Pek Jun Tiw & Chaoming Wang & Xiaolong Zou & Rui Yuan & Chang Liu & Ge Li & Chen Ge & Si Wu & Teng Zhang & Ru Huang & Yuchao Yang, 2024. "High-order sensory processing nanocircuit based on coupled VO2 oscillators," Nature Communications, Nature, vol. 15(1), pages 1-12, December.

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