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Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots

Author

Listed:
  • Daniel Huber

    (Institute of Semiconductor and Solid State Physics, Johannes Kepler University)

  • Marcus Reindl

    (Institute of Semiconductor and Solid State Physics, Johannes Kepler University)

  • Yongheng Huo

    (Institute of Semiconductor and Solid State Physics, Johannes Kepler University
    Institute for Integrative Nanosciences, IFW Dresden
    Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China
    CAS-Alibaba Quantum Computing Laboratory, USTC Shanghai)

  • Huiying Huang

    (Institute of Semiconductor and Solid State Physics, Johannes Kepler University)

  • Johannes S. Wildmann

    (Institute of Semiconductor and Solid State Physics, Johannes Kepler University)

  • Oliver G. Schmidt

    (Institute for Integrative Nanosciences, IFW Dresden)

  • Armando Rastelli

    (Institute of Semiconductor and Solid State Physics, Johannes Kepler University)

  • Rinaldo Trotta

    (Institute of Semiconductor and Solid State Physics, Johannes Kepler University)

Abstract

The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski–Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g(2)(0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies.

Suggested Citation

  • Daniel Huber & Marcus Reindl & Yongheng Huo & Huiying Huang & Johannes S. Wildmann & Oliver G. Schmidt & Armando Rastelli & Rinaldo Trotta, 2017. "Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots," Nature Communications, Nature, vol. 8(1), pages 1-7, August.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms15506
    DOI: 10.1038/ncomms15506
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