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Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature

Author

Listed:
  • L. Chen

    (Institute of Experimental and Applied Physics, University of Regensburg)

  • M. Decker

    (Institute of Experimental and Applied Physics, University of Regensburg)

  • M. Kronseder

    (Institute of Experimental and Applied Physics, University of Regensburg)

  • R. Islinger

    (Institute of Experimental and Applied Physics, University of Regensburg)

  • M. Gmitra

    (Institute of Theoretical Physics, University of Regensburg)

  • D. Schuh

    (Institute of Experimental and Applied Physics, University of Regensburg)

  • D. Bougeard

    (Institute of Experimental and Applied Physics, University of Regensburg)

  • J. Fabian

    (Institute of Theoretical Physics, University of Regensburg)

  • D. Weiss

    (Institute of Experimental and Applied Physics, University of Regensburg)

  • C. H. Back

    (Institute of Experimental and Applied Physics, University of Regensburg)

Abstract

Interfacial spin-orbit torques (SOTs) enable the manipulation of the magnetization through in-plane charge currents, which has drawn increasing attention for spintronic applications. The search for material systems providing efficient SOTs, has been focused on polycrystalline ferromagnetic metal/non-magnetic metal bilayers. In these systems, currents flowing in the non-magnetic layer generate—due to strong spin–orbit interaction—spin currents via the spin Hall effect and induce a torque at the interface to the ferromagnet. Here we report the observation of robust SOT occuring at a single crystalline Fe/GaAs (001) interface at room temperature. We find that the magnitude of the interfacial SOT, caused by the reduced symmetry at the interface, is comparably strong as in ferromagnetic metal/non-magnetic metal systems. The large spin-orbit fields at the interface also enable spin-to-charge current conversion at the interface, known as spin-galvanic effect. The results suggest that single crystalline Fe/GaAs interfaces may enable efficient electrical magnetization manipulation.

Suggested Citation

  • L. Chen & M. Decker & M. Kronseder & R. Islinger & M. Gmitra & D. Schuh & D. Bougeard & J. Fabian & D. Weiss & C. H. Back, 2016. "Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature," Nature Communications, Nature, vol. 7(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms13802
    DOI: 10.1038/ncomms13802
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