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In-plane topological p-n junction in the three-dimensional topological insulator Bi2−xSbxTe3−ySey

Author

Listed:
  • Ngoc Han Tu

    (Graduate School of Science, Tohoku University)

  • Yoichi Tanabe

    (Graduate School of Science, Tohoku University)

  • Yosuke Satake

    (Graduate School of Science, Tohoku University)

  • Khuong Kim Huynh

    (WPI-Advanced Institute for Materials Research)

  • Katsumi Tanigaki

    (Graduate School of Science, Tohoku University
    WPI-Advanced Institute for Materials Research)

Abstract

A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi2−xSbxTe3−ySey thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi2−xSbxTe3−ySey on its top half by using tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.

Suggested Citation

  • Ngoc Han Tu & Yoichi Tanabe & Yosuke Satake & Khuong Kim Huynh & Katsumi Tanigaki, 2016. "In-plane topological p-n junction in the three-dimensional topological insulator Bi2−xSbxTe3−ySey," Nature Communications, Nature, vol. 7(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms13763
    DOI: 10.1038/ncomms13763
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