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Dimensional crossover in semiconductor nanostructures

Author

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  • Matthew P. McDonald

    (University of Notre Dame)

  • Rusha Chatterjee

    (University of Notre Dame)

  • Jixin Si

    (University of Notre Dame)

  • Boldizsár Jankó

    (University of Notre Dame)

  • Masaru Kuno

    (University of Notre Dame)

Abstract

Recent advances in semiconductor nanostructure syntheses provide unprecedented control over electronic quantum confinement and have led to extensive investigations of their size- and shape-dependent optical/electrical properties. Notably, spectroscopic measurements show that optical bandgaps of one-dimensional CdSe nanowires are substantially (approximately 100 meV) lower than their zero-dimensional counterparts for equivalent diameters spanning 5–10 nm. But what, exactly, dictates the dimensional crossover of a semiconductor’s electronic structure? Here we probe the one-dimensional to zero-dimensional transition of CdSe using single nanowire/nanorod absorption spectroscopy. We find that carrier electrostatic interactions play a fundamental role in establishing dimensional crossover. Moreover, the critical length at which this transition occurs is governed by the aspect ratio-dependent interplay between carrier confinement and dielectric contrast/confinement energies.

Suggested Citation

  • Matthew P. McDonald & Rusha Chatterjee & Jixin Si & Boldizsár Jankó & Masaru Kuno, 2016. "Dimensional crossover in semiconductor nanostructures," Nature Communications, Nature, vol. 7(1), pages 1-5, November.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms12726
    DOI: 10.1038/ncomms12726
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