Author
Listed:
- Kwang-Chon Kim
(Center for Electronic Materials, Korea Institute of Science and Technology
School of Electrical and Electronic Engineering, Yonsei University)
- Joohwi Lee
(Kyoto University)
- Byung Kyu Kim
(High Temperature Energy Materials Research Center, Korea Institute of Science and Technology)
- Won Young Choi
(KU-KIST Graduate School of Converging Science and Technology, Korea University
Center for Spintronics, Korea Institute of Science and Technology)
- Hye Jung Chang
(Advanced Analysis Center, Korea Institute of Science and Technology
Korea University of Science and Technology)
- Sung Ok Won
(Advanced Analysis Center, Korea Institute of Science and Technology)
- Beomjin Kwon
(Center for Electronic Materials, Korea Institute of Science and Technology)
- Seong Keun Kim
(Center for Electronic Materials, Korea Institute of Science and Technology)
- Dow-Bin Hyun
(Center for Electronic Materials, Korea Institute of Science and Technology)
- Hyun Jae Kim
(School of Electrical and Electronic Engineering, Yonsei University)
- Hyun Cheol Koo
(KU-KIST Graduate School of Converging Science and Technology, Korea University
Center for Spintronics, Korea Institute of Science and Technology)
- Jung-Hae Choi
(Center for Electronic Materials, Korea Institute of Science and Technology)
- Dong-Ik Kim
(High Temperature Energy Materials Research Center, Korea Institute of Science and Technology)
- Jin-Sang Kim
(Center for Electronic Materials, Korea Institute of Science and Technology)
- Seung-Hyub Baek
(Center for Electronic Materials, Korea Institute of Science and Technology
Korea University of Science and Technology)
Abstract
Interfaces, such as grain boundaries in a solid material, are excellent regions to explore novel properties that emerge as the result of local symmetry-breaking. For instance, at the interface of a layered-chalcogenide material, the potential reconfiguration of the atoms at the boundaries can lead to a significant modification of the electronic properties because of their complex atomic bonding structure. Here, we report the experimental observation of an electron source at 60° twin boundaries in Bi2Te3, a representative layered-chalcogenide material. First-principles calculations reveal that the modification of the interatomic distance at the 60° twin boundary to accommodate structural misfits can alter the electronic structure of Bi2Te3. The change in the electronic structure generates occupied states within the original bandgap in a favourable condition to create carriers and enlarges the density-of-states near the conduction band minimum. The present work provides insight into the various transport behaviours of thermoelectrics and topological insulators.
Suggested Citation
Kwang-Chon Kim & Joohwi Lee & Byung Kyu Kim & Won Young Choi & Hye Jung Chang & Sung Ok Won & Beomjin Kwon & Seong Keun Kim & Dow-Bin Hyun & Hyun Jae Kim & Hyun Cheol Koo & Jung-Hae Choi & Dong-Ik Kim, 2016.
"Free-electron creation at the 60° twin boundary in Bi2Te3,"
Nature Communications, Nature, vol. 7(1), pages 1-6, November.
Handle:
RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms12449
DOI: 10.1038/ncomms12449
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