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Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

Author

Listed:
  • Boyd W. Veal

    (Argonne National Laboratory)

  • Seong Keun Kim

    (Argonne National Laboratory
    Present address: Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791, South Korea.)

  • Peter Zapol

    (Argonne National Laboratory)

  • Hakim Iddir

    (Argonne National Laboratory)

  • Peter M. Baldo

    (Argonne National Laboratory)

  • Jeffrey A. Eastman

    (Argonne National Laboratory)

Abstract

Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment.

Suggested Citation

  • Boyd W. Veal & Seong Keun Kim & Peter Zapol & Hakim Iddir & Peter M. Baldo & Jeffrey A. Eastman, 2016. "Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures," Nature Communications, Nature, vol. 7(1), pages 1-8, September.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms11892
    DOI: 10.1038/ncomms11892
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