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Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

Author

Listed:
  • S. K. Kushwaha

    (Frick Chemistry Laboratory, Princeton University)

  • I. Pletikosić

    (Princeton University
    Brookhaven National Laboratory)

  • T. Liang

    (Princeton University)

  • A. Gyenis

    (Princeton University)

  • S. H. Lapidus

    (Advanced Photon Source, Argonne National Laboratory)

  • Yao Tian

    (University of Toronto)

  • He Zhao

    (Boston College)

  • K. S. Burch

    (Boston College)

  • Jingjing Lin

    (Princeton University)

  • Wudi Wang

    (Princeton University)

  • Huiwen Ji

    (Frick Chemistry Laboratory, Princeton University)

  • A. V. Fedorov

    (Advanced Light Source, Lawrence Berkeley National Laboratory)

  • Ali Yazdani

    (Princeton University)

  • N. P. Ong

    (Princeton University)

  • T. Valla

    (Brookhaven National Laboratory)

  • R. J. Cava

    (Frick Chemistry Laboratory, Princeton University)

Abstract

A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.

Suggested Citation

  • S. K. Kushwaha & I. Pletikosić & T. Liang & A. Gyenis & S. H. Lapidus & Yao Tian & He Zhao & K. S. Burch & Jingjing Lin & Wudi Wang & Huiwen Ji & A. V. Fedorov & Ali Yazdani & N. P. Ong & T. Valla & R, 2016. "Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties," Nature Communications, Nature, vol. 7(1), pages 1-9, September.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms11456
    DOI: 10.1038/ncomms11456
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