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Suppressing molecular vibrations in organic semiconductors by inducing strain

Author

Listed:
  • Takayoshi Kubo

    (Graduate School of Frontier Sciences, The University of Tokyo)

  • Roger Häusermann

    (Graduate School of Frontier Sciences, The University of Tokyo)

  • Junto Tsurumi

    (Graduate School of Frontier Sciences, The University of Tokyo)

  • Junshi Soeda

    (Graduate School of Frontier Sciences, The University of Tokyo
    Graduate School of Engineering, Osaka University)

  • Yugo Okada

    (Graduate School of Frontier Sciences, The University of Tokyo)

  • Yu Yamashita

    (Graduate School of Frontier Sciences, The University of Tokyo)

  • Norihisa Akamatsu

    (Chemical Resources Laboratory, Tokyo Institute of Technology)

  • Atsushi Shishido

    (Chemical Resources Laboratory, Tokyo Institute of Technology
    PRESTO, Japan Science and Technology Agency (JST))

  • Chikahiko Mitsui

    (Graduate School of Frontier Sciences, The University of Tokyo)

  • Toshihiro Okamoto

    (Graduate School of Frontier Sciences, The University of Tokyo
    PRESTO, Japan Science and Technology Agency (JST))

  • Susumu Yanagisawa

    (Faculty of Science, University of the Ryukyus)

  • Hiroyuki Matsui

    (Graduate School of Frontier Sciences, The University of Tokyo)

  • Jun Takeya

    (Graduate School of Frontier Sciences, The University of Tokyo)

Abstract

Organic molecular semiconductors are solution processable, enabling the growth of large-area single-crystal semiconductors. Improving the performance of organic semiconductor devices by increasing the charge mobility is an ongoing quest, which calls for novel molecular and material design, and improved processing conditions. Here we show a method to increase the charge mobility in organic single-crystal field-effect transistors, by taking advantage of the inherent softness of organic semiconductors. We compress the crystal lattice uniaxially by bending the flexible devices, leading to an improved charge transport. The mobility increases from 9.7 to 16.5 cm2 V−1 s−1 by 70% under 3% strain. In-depth analysis indicates that compressing the crystal structure directly restricts the vibration of the molecules, thus suppresses dynamic disorder, a unique mechanism in organic semiconductors. Since strain can be easily induced during the fabrication process, we expect our method to be exploited to build high-performance organic devices.

Suggested Citation

  • Takayoshi Kubo & Roger Häusermann & Junto Tsurumi & Junshi Soeda & Yugo Okada & Yu Yamashita & Norihisa Akamatsu & Atsushi Shishido & Chikahiko Mitsui & Toshihiro Okamoto & Susumu Yanagisawa & Hiroyuk, 2016. "Suppressing molecular vibrations in organic semiconductors by inducing strain," Nature Communications, Nature, vol. 7(1), pages 1-7, September.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms11156
    DOI: 10.1038/ncomms11156
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    Cited by:

    1. Mingliang Li & Jing Zheng & Xiaoge Wang & Runze Yu & Yunteng Wang & Yi Qiu & Xiang Cheng & Guozhi Wang & Gang Chen & Kefeng Xie & Jinyao Tang, 2022. "Light-responsive self-strained organic semiconductor for large flexible OFET sensing array," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    2. Xiaosong Chen & Zhongwu Wang & Jiannan Qi & Yongxu Hu & Yinan Huang & Shougang Sun & Yajing Sun & Wenbin Gong & Langli Luo & Lifeng Zhang & Haiyan Du & Xiaoxia Hu & Cheng Han & Jie Li & Deyang Ji & Li, 2022. "Balancing the film strain of organic semiconductors for ultrastable organic transistors with a five-year lifetime," Nature Communications, Nature, vol. 13(1), pages 1-9, December.

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