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Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

Author

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  • Woo Young Kim

    (Korea Advanced Institute of Science and Technology(KAIST))

  • Hyeon-Don Kim

    (Korea Advanced Institute of Science and Technology(KAIST))

  • Teun-Teun Kim

    (Korea Advanced Institute of Science and Technology(KAIST)
    Metamaterial Research Centre, School of Physics and Astronomy, University of Birmingham)

  • Hyun-Sung Park

    (Korea Advanced Institute of Science and Technology(KAIST))

  • Kanghee Lee

    (Korea Advanced Institute of Science and Technology(KAIST))

  • Hyun Joo Choi

    (Korea Advanced Institute of Science and Technology(KAIST))

  • Seung Hoon Lee

    (Korea Advanced Institute of Science and Technology(KAIST)
    Present address: Department of Applied Physics and Materials Science, California Institute of Technology, California 91125, USA.)

  • Jaehyeon Son

    (Korea Advanced Institute of Science and Technology(KAIST))

  • Namkyoo Park

    (Photonic Systems Laboratory, School of EECS, Seoul National University)

  • Bumki Min

    (Korea Advanced Institute of Science and Technology(KAIST))

Abstract

Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

Suggested Citation

  • Woo Young Kim & Hyeon-Don Kim & Teun-Teun Kim & Hyun-Sung Park & Kanghee Lee & Hyun Joo Choi & Seung Hoon Lee & Jaehyeon Son & Namkyoo Park & Bumki Min, 2016. "Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations," Nature Communications, Nature, vol. 7(1), pages 1-6, April.
  • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms10429
    DOI: 10.1038/ncomms10429
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