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Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)2Te3

Author

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  • Mao Ye

    (State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
    CAS-Shanghai Science Research Center)

  • Wei Li

    (State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
    CAS-Shanghai Science Research Center)

  • Siyuan Zhu

    (Graduate School of Science, Hiroshima University)

  • Yukiharu Takeda

    (Quantum Beam Science Center, Japan Atomic Energy Agency)

  • Yuji Saitoh

    (Quantum Beam Science Center, Japan Atomic Energy Agency)

  • Jiajia Wang

    (School of physical science and technology, ShanghaiTech University)

  • Hong Pan

    (State Key Laboratory of Surface Physics, and Laboratory of Advanced Materials, Fudan University)

  • Munisa Nurmamat

    (Graduate School of Science, Hiroshima University)

  • Kazuki Sumida

    (Graduate School of Science, Hiroshima University)

  • Fuhao Ji

    (State Key Laboratory of Surface Physics, and Laboratory of Advanced Materials, Fudan University)

  • Zhen Liu

    (State Key Laboratory of Surface Physics, and Laboratory of Advanced Materials, Fudan University)

  • Haifeng Yang

    (State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences)

  • Zhengtai Liu

    (State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences)

  • Dawei Shen

    (State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
    CAS-Shanghai Science Research Center)

  • Akio Kimura

    (Graduate School of Science, Hiroshima University)

  • Shan Qiao

    (State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
    CAS-Shanghai Science Research Center
    School of physical science and technology, ShanghaiTech University)

  • Xiaoming Xie

    (State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
    CAS-Shanghai Science Research Center
    School of physical science and technology, ShanghaiTech University)

Abstract

Magnetically doped topological insulators, possessing an energy gap created at the Dirac point through time-reversal-symmetry breaking, are predicted to exhibit exotic phenomena including the quantized anomalous Hall effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. Although several candidates of magnetically doped topological insulators were demonstrated to show long-range magnetic order, the realization of the quantized anomalous Hall effect is so far restricted to the Cr-doped (Sb,Bi)2Te3 system at extremely low temperature; however, the microscopic origin of its ferromagnetism is poorly understood. Here we present an element-resolved study for Cr-doped (Sb,Bi)2Te3 using X-ray magnetic circular dichroism to unambiguously show that the long-range magnetic order is mediated by the p-hole carriers of the host lattice, and the interaction between the Sb(Te) p and Cr d states is crucial. Our results are important for material engineering in realizing the quantized anomalous Hall effect at higher temperatures.

Suggested Citation

  • Mao Ye & Wei Li & Siyuan Zhu & Yukiharu Takeda & Yuji Saitoh & Jiajia Wang & Hong Pan & Munisa Nurmamat & Kazuki Sumida & Fuhao Ji & Zhen Liu & Haifeng Yang & Zhengtai Liu & Dawei Shen & Akio Kimura &, 2015. "Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)2Te3," Nature Communications, Nature, vol. 6(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms9913
    DOI: 10.1038/ncomms9913
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