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Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

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  • Jianbo Gao

    (Center for Advanced Solar Photophysics, Los Alamos National Laboratory
    Present Address: Chemistry Department, University of California, Berkeley, California 94720, USA.)

  • Andrew F. Fidler

    (Center for Advanced Solar Photophysics, Los Alamos National Laboratory)

  • Victor I. Klimov

    (Center for Advanced Solar Photophysics, Los Alamos National Laboratory)

Abstract

In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. Here we report ultrafast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.

Suggested Citation

  • Jianbo Gao & Andrew F. Fidler & Victor I. Klimov, 2015. "Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots," Nature Communications, Nature, vol. 6(1), pages 1-8, November.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms9185
    DOI: 10.1038/ncomms9185
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