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Ionization-induced annealing of pre-existing defects in silicon carbide

Author

Listed:
  • Yanwen Zhang

    (Oak Ridge National Laboratory
    University of Tennessee)

  • Ritesh Sachan

    (Oak Ridge National Laboratory)

  • Olli H. Pakarinen

    (Oak Ridge National Laboratory
    University of Helsinki)

  • Matthew F. Chisholm

    (Oak Ridge National Laboratory)

  • Peng Liu

    (University of Tennessee
    School of Physics, Key Laboratory of Particle Physics and Particle Irradiation (MOE), Shandong University)

  • Haizhou Xue

    (University of Tennessee)

  • William J. Weber

    (Oak Ridge National Laboratory
    University of Tennessee)

Abstract

A long-standing objective in materials research is to effectively heal fabrication defects or to remove pre-existing or environmentally induced damage in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power and high-frequency applications. Its high corrosion and radiation resistance makes it a key refractory/structural material with great potential for extremely harsh radiation environments. Here we show that the energy transferred to the electron system of SiC by energetic ions via inelastic ionization can effectively anneal pre-existing defects and restore the structural order. The threshold determined for this recovery process reveals that it can be activated by 750 and 850 keV Si and C self-ions, respectively. The results conveyed here can contribute to SiC-based device fabrication by providing a room-temperature approach to repair atomic lattice structures, and to SiC performance prediction as either a functional material for device applications or a structural material for high-radiation environments.

Suggested Citation

  • Yanwen Zhang & Ritesh Sachan & Olli H. Pakarinen & Matthew F. Chisholm & Peng Liu & Haizhou Xue & William J. Weber, 2015. "Ionization-induced annealing of pre-existing defects in silicon carbide," Nature Communications, Nature, vol. 6(1), pages 1-7, November.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms9049
    DOI: 10.1038/ncomms9049
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