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Large Seebeck effect by charge-mobility engineering

Author

Listed:
  • Peijie Sun

    (Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences)

  • Beipei Wei

    (Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences)

  • Jiahao Zhang

    (Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences)

  • Jan M. Tomczak

    (Institute of Solid State Physics, Vienna University of Technology)

  • A.M. Strydom

    (Highly Correlated Matter Research Group, University of Johannesburg
    Max Planck Institute for Chemical Physics of Solids)

  • M. Søndergaard

    (University of Aarhus)

  • Bo B. Iversen

    (University of Aarhus)

  • Frank Steglich

    (Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
    Max Planck Institute for Chemical Physics of Solids)

Abstract

The Seebeck effect describes the generation of an electric potential in a conducting solid exposed to a temperature gradient. In most cases, it is dominated by an energy-dependent electronic density of states at the Fermi level, in line with the prevalent efforts towards superior thermoelectrics through the engineering of electronic structure. Here we demonstrate an alternative source for the Seebeck effect based on charge-carrier relaxation: a charge mobility that changes rapidly with temperature can result in a sizeable addition to the Seebeck coefficient. This new Seebeck source is demonstrated explicitly for Ni-doped CoSb3, where a marked mobility change occurs due to the crossover between two different charge-relaxation regimes. Our findings unveil the origin of pronounced features in the Seebeck coefficient of many other elusive materials characterized by a significant mobility mismatch. When utilized appropriately, this effect can also provide a novel route to the design of improved thermoelectric materials.

Suggested Citation

  • Peijie Sun & Beipei Wei & Jiahao Zhang & Jan M. Tomczak & A.M. Strydom & M. Søndergaard & Bo B. Iversen & Frank Steglich, 2015. "Large Seebeck effect by charge-mobility engineering," Nature Communications, Nature, vol. 6(1), pages 1-5, November.
  • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms8475
    DOI: 10.1038/ncomms8475
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    Cited by:

    1. E. J. Wildman & G. B. Lawrence & A. Walsh & K. Morita & S. Simpson & C. Ritter & G. B. G. Stenning & A. M. Arevalo-Lopez & A. C. Mclaughlin, 2023. "Observation of an exotic insulator to insulator transition upon electron doping the Mott insulator CeMnAsO," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
    2. Shohei Horike & Qingshuo Wei & Kouki Akaike & Kazuhiro Kirihara & Masakazu Mukaida & Yasuko Koshiba & Kenji Ishida, 2022. "Bicyclic-ring base doping induces n-type conduction in carbon nanotubes with outstanding thermal stability in air," Nature Communications, Nature, vol. 13(1), pages 1-10, December.

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