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Lead iodide perovskite light-emitting field-effect transistor

Author

Listed:
  • Xin Yu Chin

    (School of Physical and Mathematical Sciences, Nanyang Technological University)

  • Daniele Cortecchia

    (Interdisciplinary Graduate School, Nanyang Technological University
    Energy Research Institute @ NTU (ERI@N), Research Techno Plaza, Nanyang Technological University)

  • Jun Yin

    (School of Physical and Mathematical Sciences, Nanyang Technological University
    Centre for Disruptive Photonic Technologies, Nanyang Technological University)

  • Annalisa Bruno

    (School of Physical and Mathematical Sciences, Nanyang Technological University
    Energy Research Institute @ NTU (ERI@N), Research Techno Plaza, Nanyang Technological University)

  • Cesare Soci

    (School of Physical and Mathematical Sciences, Nanyang Technological University
    Centre for Disruptive Photonic Technologies, Nanyang Technological University)

Abstract

Despite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.

Suggested Citation

  • Xin Yu Chin & Daniele Cortecchia & Jun Yin & Annalisa Bruno & Cesare Soci, 2015. "Lead iodide perovskite light-emitting field-effect transistor," Nature Communications, Nature, vol. 6(1), pages 1-9, November.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms8383
    DOI: 10.1038/ncomms8383
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    Cited by:

    1. Mara Bruzzi & Naomi Falsini & Nicola Calisi & Anna Vinattieri, 2020. "Electrically Active Defects in Polycrystalline and Single Crystal Metal Halide Perovskite," Energies, MDPI, vol. 13(7), pages 1-14, April.

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