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Quantum Hall effect on top and bottom surface states of topological insulator (Bi1−xSbx)2Te3 films

Author

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  • R. Yoshimi

    (University of Tokyo)

  • A. Tsukazaki

    (Institute for Materials Research, Tohoku University
    PRESTO, Japan Science and Technology Agency (JST))

  • Y. Kozuka

    (University of Tokyo)

  • J. Falson

    (University of Tokyo)

  • K.S. Takahashi

    (RIKEN Center for Emergent Matter Science (CEMS))

  • J.G. Checkelsky

    (University of Tokyo
    Present address: Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.)

  • N. Nagaosa

    (University of Tokyo
    RIKEN Center for Emergent Matter Science (CEMS))

  • M. Kawasaki

    (University of Tokyo
    RIKEN Center for Emergent Matter Science (CEMS))

  • Y. Tokura

    (University of Tokyo
    RIKEN Center for Emergent Matter Science (CEMS))

Abstract

The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in (Bi1−xSbx)2Te3 films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.

Suggested Citation

  • R. Yoshimi & A. Tsukazaki & Y. Kozuka & J. Falson & K.S. Takahashi & J.G. Checkelsky & N. Nagaosa & M. Kawasaki & Y. Tokura, 2015. "Quantum Hall effect on top and bottom surface states of topological insulator (Bi1−xSbx)2Te3 films," Nature Communications, Nature, vol. 6(1), pages 1-6, May.
  • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms7627
    DOI: 10.1038/ncomms7627
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