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Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride

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  • Chunlin Chen

    (Advanced Institute for Materials Research, Tohoku University)

  • Zhongchang Wang

    (Advanced Institute for Materials Research, Tohoku University)

  • Takeharu Kato

    (Nanostructures Research Laboratory, Japan Fine Ceramics Center)

  • Naoya Shibata

    (Institute of Engineering Innovation, University of Tokyo)

  • Takashi Taniguchi

    (National Institute for Materials Science)

  • Yuichi Ikuhara

    (Advanced Institute for Materials Research, Tohoku University
    Nanostructures Research Laboratory, Japan Fine Ceramics Center
    Institute of Engineering Innovation, University of Tokyo)

Abstract

Diamond and cubic boron nitride (c-BN) are the top two hardest materials on the Earth. Clarifying how the two seemingly incompressible materials can actually join represents one of the most challenging issues in materials science. Here we apply the temperature gradient method to grow the c-BN single crystals on diamond and report a successful epitaxial growth. By transmission electron microscopy, we reveal a novel misfit accommodation mechanism for a {111} diamond/c-BN heterointerface, that is, lattice misfit can be accommodated by continuous stacking fault networks, which are connected by periodically arranged hexagonal dislocation loops. The loops are found to comprise six 60° Shockley partial dislocations. Atomically, the carbon in diamond bonds directly to boron in c-BN at the interface, which electronically induces a two-dimensional electron gas and a quasi-1D electrical conductivity. Our findings point to the existence of a novel misfit accommodation mechanism associated with the superhard materials.

Suggested Citation

  • Chunlin Chen & Zhongchang Wang & Takeharu Kato & Naoya Shibata & Takashi Taniguchi & Yuichi Ikuhara, 2015. "Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride," Nature Communications, Nature, vol. 6(1), pages 1-6, May.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms7327
    DOI: 10.1038/ncomms7327
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