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Silicon-chip mid-infrared frequency comb generation

Author

Listed:
  • Austin G. Griffith

    (School of Electrical and Computer Engineering, Cornell University)

  • Ryan K.W. Lau

    (School of Applied and Engineering Physics, Cornell University)

  • Jaime Cardenas

    (School of Electrical and Computer Engineering, Cornell University)

  • Yoshitomo Okawachi

    (School of Applied and Engineering Physics, Cornell University)

  • Aseema Mohanty

    (School of Electrical and Computer Engineering, Cornell University)

  • Romy Fain

    (School of Electrical and Computer Engineering, Cornell University)

  • Yoon Ho Daniel Lee

    (School of Electrical and Computer Engineering, Cornell University)

  • Mengjie Yu

    (School of Applied and Engineering Physics, Cornell University)

  • Christopher T. Phare

    (School of Electrical and Computer Engineering, Cornell University)

  • Carl B. Poitras

    (School of Electrical and Computer Engineering, Cornell University)

  • Alexander L. Gaeta

    (School of Applied and Engineering Physics, Cornell University
    Kavli Institute at Cornell for Nanoscale Science, Cornell University)

  • Michal Lipson

    (School of Electrical and Computer Engineering, Cornell University
    Kavli Institute at Cornell for Nanoscale Science, Cornell University)

Abstract

Optical frequency combs are a revolutionary light source for high-precision spectroscopy because of their narrow linewidths and precise frequency spacing. Generation of such combs in the mid-infrared spectral region (2–20 μm) is important for molecular gas detection owing to the presence of a large number of absorption lines in this wavelength regime. Microresonator-based frequency comb sources can provide a compact and robust platform for comb generation that can operate with relatively low optical powers. However, material and dispersion engineering limitations have prevented the realization of an on-chip integrated mid-infrared microresonator comb source. Here we demonstrate a complementary metal–oxide–semiconductor compatible platform for on-chip comb generation using silicon microresonators, and realize a broadband frequency comb spanning from 2.1 to 3.5 μm. This platform is compact and robust and offers the potential to be versatile for use outside the laboratory environment for applications such as real-time monitoring of atmospheric gas conditions.

Suggested Citation

  • Austin G. Griffith & Ryan K.W. Lau & Jaime Cardenas & Yoshitomo Okawachi & Aseema Mohanty & Romy Fain & Yoon Ho Daniel Lee & Mengjie Yu & Christopher T. Phare & Carl B. Poitras & Alexander L. Gaeta & , 2015. "Silicon-chip mid-infrared frequency comb generation," Nature Communications, Nature, vol. 6(1), pages 1-5, May.
  • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms7299
    DOI: 10.1038/ncomms7299
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