Author
Listed:
- Yu Li Huang
(National University of Singapore
Centre for Advanced 2D Materials and Graphene Research, National University of Singapore)
- Yifeng Chen
(National University of Singapore
Centre for Advanced 2D Materials and Graphene Research, National University of Singapore)
- Wenjing Zhang
(National University of Singapore
SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University)
- Su Ying Quek
(National University of Singapore
Centre for Advanced 2D Materials and Graphene Research, National University of Singapore)
- Chang-Hsiao Chen
(Institute of Atomic and Molecular Sciences, Academia Sinica)
- Lain-Jong Li
(Institute of Atomic and Molecular Sciences, Academia Sinica
Physical Sciences and Engineering, King Abdullah University of Science and Technology)
- Wei-Ting Hsu
(National Chiao Tung University)
- Wen-Hao Chang
(National Chiao Tung University)
- Yu Jie Zheng
(National University of Singapore)
- Wei Chen
(National University of Singapore
Centre for Advanced 2D Materials and Graphene Research, National University of Singapore
National University of Singapore)
- Andrew T. S. Wee
(National University of Singapore
Centre for Advanced 2D Materials and Graphene Research, National University of Singapore)
Abstract
Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40±0.05 eV for single-layer, 2.10±0.05 eV for bilayer and 1.75±0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85±0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.
Suggested Citation
Yu Li Huang & Yifeng Chen & Wenjing Zhang & Su Ying Quek & Chang-Hsiao Chen & Lain-Jong Li & Wei-Ting Hsu & Wen-Hao Chang & Yu Jie Zheng & Wei Chen & Andrew T. S. Wee, 2015.
"Bandgap tunability at single-layer molybdenum disulphide grain boundaries,"
Nature Communications, Nature, vol. 6(1), pages 1-8, May.
Handle:
RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms7298
DOI: 10.1038/ncomms7298
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