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Probing the limits of gate-based charge sensing

Author

Listed:
  • M. F. Gonzalez-Zalba

    (Hitachi Cambridge Laboratory)

  • S. Barraud

    (CEA, LETI, Minatec Campus)

  • A. J. Ferguson

    (Cavendish Laboratory, University of Cambridge)

  • A. C. Betz

    (Hitachi Cambridge Laboratory)

Abstract

Quantum computation requires a qubit-specific measurement capability to readout the final state of individual qubits. Promising solid-state architectures use external readout electrometers but these can be replaced by a more compact readout element, an in situ gate sensor. Gate-sensing couples the qubit to a resonant circuit via a gate and probes the qubit’s radiofrequency polarizability. Here we investigate the ultimate performance of such a resonant readout scheme and the noise sources that limit its operation. We find a charge sensitivity of 37 μe Hz−1/2, the best value reported for this technique, using the example of a gate sensor strongly coupled to a double quantum dot at the corner states of a silicon nanowire transistor. We discuss the experimental factors limiting gate detection and highlight ways to optimize its sensitivity. In total, resonant gate-based readout has advantages over external electrometers both in terms of reduction of circuit elements as well as absolute charge sensitivity.

Suggested Citation

  • M. F. Gonzalez-Zalba & S. Barraud & A. J. Ferguson & A. C. Betz, 2015. "Probing the limits of gate-based charge sensing," Nature Communications, Nature, vol. 6(1), pages 1-8, May.
  • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms7084
    DOI: 10.1038/ncomms7084
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