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Observation of the intrinsic bandgap behaviour in as-grown epitaxial twisted graphene

Author

Listed:
  • Jeongho Park

    (Air Force Research Laboratory, Materials and Manufacturing Directorate (AFRL/RXAN) Wright-Patterson AFB)

  • William C. Mitchel

    (Air Force Research Laboratory, Materials and Manufacturing Directorate (AFRL/RXAN) Wright-Patterson AFB)

  • Said Elhamri

    (University of Dayton)

  • Lawrence Grazulis

    (Air Force Research Laboratory, Materials and Manufacturing Directorate (AFRL/RXAN) Wright-Patterson AFB)

  • John Hoelscher

    (Air Force Research Laboratory, Materials and Manufacturing Directorate (AFRL/RXAN) Wright-Patterson AFB)

  • Krishnamurthy Mahalingam

    (Air Force Research Laboratory, Materials and Manufacturing Directorate (AFRL/RXAN) Wright-Patterson AFB)

  • Choongyu Hwang

    (Pusan National University)

  • Sung-Kwan Mo

    (Advanced Light Source, Lawrence Berkeley National Laboratory)

  • Jonghoon Lee

    (Air Force Research Laboratory, Materials and Manufacturing Directorate (AFRL/RXAN) Wright-Patterson AFB)

Abstract

Twisted graphene is of particular interest due to several intriguing characteristics, such as its the Fermi velocity, van Hove singularities and electronic localization. Theoretical studies recently suggested the possible bandgap opening and tuning. Here, we report a novel approach to producing epitaxial twisted graphene on SiC (0001) and the observation of its intrinsic bandgap behaviour. The direct deposition of C60 on pre-grown graphene layers results in few-layer twisted graphene confirmed by angular resolved photoemission spectroscopy and Raman analysis. The strong enhanced G band in Raman and sp3 bonding characteristic in X-ray photoemission spectroscopy suggests the existence of interlayer interaction between adjacent graphene layers. The interlayer spacing between graphene layers measured by transmission electron microscopy is 0.352±0.012 nm. Thermal activation behaviour and nonlinear current–voltage characteristics conclude that an intrinsic bandgap is opened in twisted graphene. Low sheet resistance (~160 Ω□−1 at 10 K) and high mobility (~2,000 cm2 V−1 s−1 at 10 K) are observed.

Suggested Citation

  • Jeongho Park & William C. Mitchel & Said Elhamri & Lawrence Grazulis & John Hoelscher & Krishnamurthy Mahalingam & Choongyu Hwang & Sung-Kwan Mo & Jonghoon Lee, 2015. "Observation of the intrinsic bandgap behaviour in as-grown epitaxial twisted graphene," Nature Communications, Nature, vol. 6(1), pages 1-8, May.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms6677
    DOI: 10.1038/ncomms6677
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