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Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures

Author

Listed:
  • A. Gamucci

    (National Enterprise for Nanoscience and Nanotechnology (NEST), Istituto Nanoscienze-Consiglio Nazionale delle Ricerche and Scuola Normale Superiore)

  • D. Spirito

    (National Enterprise for Nanoscience and Nanotechnology (NEST), Istituto Nanoscienze-Consiglio Nazionale delle Ricerche and Scuola Normale Superiore
    Present address: Istituto Italiano di Tecnologia, Nanochemistry and Graphene labs, Via Morego 30, 16163 Genova, Italy)

  • M. Carrega

    (National Enterprise for Nanoscience and Nanotechnology (NEST), Istituto Nanoscienze-Consiglio Nazionale delle Ricerche and Scuola Normale Superiore)

  • B. Karmakar

    (National Enterprise for Nanoscience and Nanotechnology (NEST), Istituto Nanoscienze-Consiglio Nazionale delle Ricerche and Scuola Normale Superiore)

  • A. Lombardo

    (Cambridge Graphene Centre, University of Cambridge)

  • M. Bruna

    (Cambridge Graphene Centre, University of Cambridge)

  • L. N. Pfeiffer

    (Princeton University)

  • K. W. West

    (Princeton University)

  • A. C. Ferrari

    (Cambridge Graphene Centre, University of Cambridge)

  • M. Polini

    (National Enterprise for Nanoscience and Nanotechnology (NEST), Istituto Nanoscienze-Consiglio Nazionale delle Ricerche and Scuola Normale Superiore
    Istituto Italiano di Tecnologia, Graphene labs)

  • V. Pellegrini

    (National Enterprise for Nanoscience and Nanotechnology (NEST), Istituto Nanoscienze-Consiglio Nazionale delle Ricerche and Scuola Normale Superiore
    Istituto Italiano di Tecnologia, Graphene labs)

Abstract

Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies. Here we report a new class of heterostructures comprising a single-layer (or bilayer) graphene in close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional electron gas. In our devices, graphene is naturally hole-doped, thereby allowing for the investigation of electron–hole interactions. We focus on the Coulomb drag transport measurements, which are sensitive to many-body effects, and find that the Coulomb drag resistivity significantly increases for temperatures

Suggested Citation

  • A. Gamucci & D. Spirito & M. Carrega & B. Karmakar & A. Lombardo & M. Bruna & L. N. Pfeiffer & K. W. West & A. C. Ferrari & M. Polini & V. Pellegrini, 2014. "Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures," Nature Communications, Nature, vol. 5(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms6824
    DOI: 10.1038/ncomms6824
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