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n-type chalcogenides by ion implantation

Author

Listed:
  • Mark A. Hughes

    (Advanced Technology Institute, University of Surrey)

  • Yanina Fedorenko

    (Advanced Technology Institute, University of Surrey)

  • Behrad Gholipour

    (Optoelectronics Research Centre, University of Southampton)

  • Jin Yao

    (Optoelectronics Research Centre, University of Southampton)

  • Tae-Hoon Lee

    (University of Cambridge)

  • Russell M. Gwilliam

    (Advanced Technology Institute, University of Surrey)

  • Kevin P. Homewood

    (Advanced Technology Institute, University of Surrey)

  • Steven Hinder

    (The Surface Analysis Laboratory, University of Surrey)

  • Daniel W. Hewak

    (Optoelectronics Research Centre, University of Southampton)

  • Stephen R. Elliott

    (University of Cambridge)

  • Richard J. Curry

    (Advanced Technology Institute, University of Surrey)

Abstract

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb ‘doping’ concentrations (~5–11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

Suggested Citation

  • Mark A. Hughes & Yanina Fedorenko & Behrad Gholipour & Jin Yao & Tae-Hoon Lee & Russell M. Gwilliam & Kevin P. Homewood & Steven Hinder & Daniel W. Hewak & Stephen R. Elliott & Richard J. Curry, 2014. "n-type chalcogenides by ion implantation," Nature Communications, Nature, vol. 5(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms6346
    DOI: 10.1038/ncomms6346
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