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Gigahertz single-trap electron pumps in silicon

Author

Listed:
  • Gento Yamahata

    (NTT Basic Research Laboratories, NTT Corporation)

  • Katsuhiko Nishiguchi

    (NTT Basic Research Laboratories, NTT Corporation)

  • Akira Fujiwara

    (NTT Basic Research Laboratories, NTT Corporation)

Abstract

Manipulation of single electrons is the key to developing ultimate electronics such as single-electron-based information processors and electrical standards in metrology. Especially, high-frequency and high-accuracy single-electron pumps are essential to realize practical current standards. While electrically defined quantum dots are widely used to build single-electron pumps, a localized state in semiconductors is also a potential candidate for accurate pumps because it can have a large activation energy for the captured electron. However, the transfer mechanism of such localized-state-mediated single-electron pumps for high-accuracy operation at a high frequency has not been well examined. Here we demonstrate a single-electron pump using a single-trap level with an activation energy of a few ten millielectron volts in Si nanotransistors. By means of gate control of capture and emission rates, the pump operates at a frequency of 3 GHz with an accuracy of better than 10−3 at 17 K, indicating that an electric field at the trap level lowers the capture and emission time to less than 25 ps.

Suggested Citation

  • Gento Yamahata & Katsuhiko Nishiguchi & Akira Fujiwara, 2014. "Gigahertz single-trap electron pumps in silicon," Nature Communications, Nature, vol. 5(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms6038
    DOI: 10.1038/ncomms6038
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