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Topological transport and atomic tunnelling–clustering dynamics for aged Cu-doped Bi2Te3 crystals

Author

Listed:
  • Taishi Chen

    (National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

  • Qian Chen

    (Southeast University)

  • Koen Schouteden

    (Solid State Physics and Magnetism Section, KU Leuven)

  • Wenkai Huang

    (National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

  • Xuefeng Wang

    (School of Electronic Science and Engineering, Nanjing University)

  • Zhe Li

    (Solid State Physics and Magnetism Section, KU Leuven)

  • Feng Miao

    (National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

  • Xinran Wang

    (School of Electronic Science and Engineering, Nanjing University)

  • Zhaoguo Li

    (National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

  • Bo Zhao

    (National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

  • Shaochun Li

    (National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

  • Fengqi Song

    (National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

  • Jinlan Wang

    (Southeast University)

  • Baigeng Wang

    (National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

  • Chris Van Haesendonck

    (Solid State Physics and Magnetism Section, KU Leuven)

  • Guanghou Wang

    (National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

Abstract

Enhancing the transport contribution of surface states in topological insulators is vital if they are to be incorporated into practical devices. Such efforts have been limited by the defect behaviour of Bi2Te3 (Se3) topological materials, where the subtle bulk carrier from intrinsic defects is dominant over the surface electrons. Compensating such defect carriers is unexpectedly achieved in (Cu0.1Bi0.9)2Te3.06 crystals. Here we report the suppression of the bulk conductance of the material by four orders of magnitude by intense ageing. The weak antilocalization analysis, Shubnikov–de Haas oscillations and scanning tunnelling spectroscopy corroborate the transport of the topological surface states. Scanning tunnelling microscopy reveals that Cu atoms are initially inside the quintuple layers and migrate to the layer gaps to form Cu clusters during the ageing. In combination with first-principles calculations, an atomic tunnelling–clustering picture across a diffusion barrier of 0.57 eV is proposed.

Suggested Citation

  • Taishi Chen & Qian Chen & Koen Schouteden & Wenkai Huang & Xuefeng Wang & Zhe Li & Feng Miao & Xinran Wang & Zhaoguo Li & Bo Zhao & Shaochun Li & Fengqi Song & Jinlan Wang & Baigeng Wang & Chris Van H, 2014. "Topological transport and atomic tunnelling–clustering dynamics for aged Cu-doped Bi2Te3 crystals," Nature Communications, Nature, vol. 5(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms6022
    DOI: 10.1038/ncomms6022
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