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Highly efficient inverted polymer light-emitting diodes using surface modifications of ZnO layer

Author

Listed:
  • Bo Ram Lee

    (School of Materials Science and Engineering and KIST-UNIST Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST))

  • Eui Dae Jung

    (School of Materials Science and Engineering and KIST-UNIST Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST))

  • Ji Sun Park

    (Energy Nano Materials Research Center, Korea Electronics Technology Institute (KETI))

  • Yun Seok Nam

    (School of Materials Science and Engineering and KIST-UNIST Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST))

  • Sa Hoon Min

    (Ulsan National Institute of Science and Technology (UNIST))

  • Byeong-Su Kim

    (Ulsan National Institute of Science and Technology (UNIST))

  • Kyung-Min Lee

    (Graduate School of Green Energy Technology, Chungnam National University)

  • Jong-Ryul Jeong

    (Graduate School of Green Energy Technology, Chungnam National University)

  • Richard H. Friend

    (Cavendish Laboratory)

  • Ji-Seon Kim

    (Imperial College London)

  • Sang Ouk Kim

    (Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), KAIST)

  • Myoung Hoon Song

    (School of Materials Science and Engineering and KIST-UNIST Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST))

Abstract

Organic light-emitting diodes have been recently focused for flexible display and solid-state lighting applications and so much effort has been devoted to achieve highly efficient organic light-emitting diodes. Here, we improve the efficiency of inverted polymer light-emitting diodes by introducing a spontaneously formed ripple-shaped nanostructure of ZnO and applying an amine-based polar solvent treatment to the nanostructure of ZnO. The nanostructure of the ZnO layer improves the extraction of the waveguide modes inside the device structure, and a 2-ME+EA interlayer enhances the electron injection and hole blocking in addition to reducing exciton quenching between the polar-solvent-treated ZnO and the emissive layer. Therefore, our optimized inverted polymer light-emitting diodes have a luminous efficiency of 61.6 cd A−1 and an external quantum efficiency of 17.8%, which are the highest efficiency values among polymer-based fluorescent light-emitting diodes that contain a single emissive layer.

Suggested Citation

  • Bo Ram Lee & Eui Dae Jung & Ji Sun Park & Yun Seok Nam & Sa Hoon Min & Byeong-Su Kim & Kyung-Min Lee & Jong-Ryul Jeong & Richard H. Friend & Ji-Seon Kim & Sang Ouk Kim & Myoung Hoon Song, 2014. "Highly efficient inverted polymer light-emitting diodes using surface modifications of ZnO layer," Nature Communications, Nature, vol. 5(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5840
    DOI: 10.1038/ncomms5840
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