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Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth

Author

Listed:
  • Wanghua Chen

    (LPICM, CNRS, Ecole Polytechnique)

  • Linwei Yu

    (LPICM, CNRS, Ecole Polytechnique
    School of Electronics Science and Engineering, Nanjing University)

  • Soumyadeep Misra

    (LPICM, CNRS, Ecole Polytechnique)

  • Zheng Fan

    (LPICM, CNRS, Ecole Polytechnique)

  • Philippe Pareige

    (GPM, CNRS, Université et INSA de Rouen)

  • Gilles Patriarche

    (LPN, CNRS)

  • Sophie Bouchoule

    (LPN, CNRS)

  • Pere Roca i Cabarrocas

    (LPICM, CNRS, Ecole Polytechnique)

Abstract

The incorporation of metal atoms into silicon nanowires during metal-particle-assisted growth is a critical issue for various nanowire-based applications. Here we have been able to access directly the incorporation and redistribution of metal atoms into silicon nanowires produced by two different processes at growth rates ranging from 3 to 40 nm s−1, by using laser-assisted atom probe tomography and scanning transmission electron microscopy. We find that the concentration of metal impurities in crystalline silicon nanowires increases with the growth rate and can reach a level of two orders of magnitude higher than that in their equilibrium solubility. Moreover, we demonstrate that the impurities are first incorporated into nanowire volume and then segregate at defects such as the twin planes. A dimer-atom-insertion kinetic model is proposed to account for the impurity incorporation into nanowires.

Suggested Citation

  • Wanghua Chen & Linwei Yu & Soumyadeep Misra & Zheng Fan & Philippe Pareige & Gilles Patriarche & Sophie Bouchoule & Pere Roca i Cabarrocas, 2014. "Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth," Nature Communications, Nature, vol. 5(1), pages 1-7, September.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5134
    DOI: 10.1038/ncomms5134
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