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Mapping polarization induced surface band bending on the Rashba semiconductor BiTeI

Author

Listed:
  • Christopher John Butler

    (National Taiwan University)

  • Hung-Hsiang Yang

    (National Taiwan University)

  • Jhen-Yong Hong

    (National Taiwan University)

  • Shih-Hao Hsu

    (National Taiwan University)

  • Raman Sankar

    (Center for Condensed Matter Sciences, National Taiwan University
    Institute of Atomic and Molecular Sciences, Academia Sinica)

  • Chun-I Lu

    (National Taiwan University)

  • Hsin-Yu Lu

    (National Taiwan University)

  • Kui-Hon Ou Yang

    (National Taiwan University)

  • Hung-Wei Shiu

    (National Synchrotron Radiation Research Center)

  • Chia-Hao Chen

    (National Synchrotron Radiation Research Center)

  • Chao-Cheng Kaun

    (Research Center for Applied Sciences, Academia Sinica
    National Tsing Hua University)

  • Guo-Jiun Shu

    (Center for Condensed Matter Sciences, National Taiwan University)

  • Fang-Cheng Chou

    (Center for Condensed Matter Sciences, National Taiwan University
    National Synchrotron Radiation Research Center
    Taiwan Consortium of Emergent Crystalline Materials (TCECM), National Science Council)

  • Minn-Tsong Lin

    (National Taiwan University
    Institute of Atomic and Molecular Sciences, Academia Sinica)

Abstract

Surfaces of semiconductors with strong spin-orbit coupling are of great interest for use in spintronic devices exploiting the Rashba effect. BiTeI features large Rashba-type spin splitting in both valence and conduction bands. Either can be shifted towards the Fermi level by surface band bending induced by the two possible polar terminations, making Rashba spin-split electron or hole bands electronically accessible. Here we demonstrate the first real-space microscopic identification of each termination with a multi-technique experimental approach. Using spatially resolved tunnelling spectroscopy across the lateral boundary between the two terminations, a previously speculated on p-n junction-like discontinuity in electronic structure at the lateral boundary is confirmed experimentally. These findings realize an important step towards the exploitation of the unique behaviour of the Rashba semiconductor BiTeI for new device concepts in spintronics.

Suggested Citation

  • Christopher John Butler & Hung-Hsiang Yang & Jhen-Yong Hong & Shih-Hao Hsu & Raman Sankar & Chun-I Lu & Hsin-Yu Lu & Kui-Hon Ou Yang & Hung-Wei Shiu & Chia-Hao Chen & Chao-Cheng Kaun & Guo-Jiun Shu & , 2014. "Mapping polarization induced surface band bending on the Rashba semiconductor BiTeI," Nature Communications, Nature, vol. 5(1), pages 1-6, September.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5066
    DOI: 10.1038/ncomms5066
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