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Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions

Author

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  • Evgeny Mikheev

    (University of California, Santa Barbara, California 93106, USA)

  • Brian D. Hoskins

    (University of California, Santa Barbara, California 93106, USA
    University of California)

  • Dmitri B. Strukov

    (University of California)

  • Susanne Stemmer

    (University of California, Santa Barbara, California 93106, USA)

Abstract

Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintentional interface layer as the origin of resistive switching in Pt/Nb:SrTiO3 junctions. We clarify the microscopic mechanisms by which the interface layer controls the resistive switching. We show that appropriate interface processing can eliminate this contribution. These findings are an important step towards engineering more reliable resistive switching devices.

Suggested Citation

  • Evgeny Mikheev & Brian D. Hoskins & Dmitri B. Strukov & Susanne Stemmer, 2014. "Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions," Nature Communications, Nature, vol. 5(1), pages 1-9, September.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms4990
    DOI: 10.1038/ncomms4990
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