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Polariton-generated intensity squeezing in semiconductor micropillars

Author

Listed:
  • T. Boulier

    (Laboratoire Kastler Brossel, Université Pierre et Marie Curie, Ecole Normale Supérieure and CNRS)

  • M. Bamba

    (Osaka University, 1-1 Machikaneyama)

  • A. Amo

    (Laboratoire Kastler Brossel, Université Pierre et Marie Curie, Ecole Normale Supérieure and CNRS
    Laboratoire Photonique et Nanostructures, CNRS, Route de Nozay)

  • C. Adrados

    (Laboratoire Kastler Brossel, Université Pierre et Marie Curie, Ecole Normale Supérieure and CNRS)

  • A. Lemaitre

    (Laboratoire Photonique et Nanostructures, CNRS, Route de Nozay)

  • E. Galopin

    (Laboratoire Photonique et Nanostructures, CNRS, Route de Nozay)

  • I. Sagnes

    (Laboratoire Photonique et Nanostructures, CNRS, Route de Nozay)

  • J. Bloch

    (Laboratoire Photonique et Nanostructures, CNRS, Route de Nozay)

  • C. Ciuti

    (Laboratoire Matériaux et Phénomènes Quantique, Université Paris Diderot et CNRS)

  • E. Giacobino

    (Laboratoire Kastler Brossel, Université Pierre et Marie Curie, Ecole Normale Supérieure and CNRS)

  • A. Bramati

    (Laboratoire Kastler Brossel, Université Pierre et Marie Curie, Ecole Normale Supérieure and CNRS)

Abstract

The generation of squeezed and entangled light fields is a crucial ingredient for the implementation of quantum information protocols. In this context, semiconductor materials offer a strong potential for the implementation of on-chip devices operating at the quantum level. Here we demonstrate a novel source of continuous variable squeezed light in pillar-shaped semiconductor microcavities in the strong coupling regime. Degenerate polariton four-wave mixing is obtained by exciting the pillar at normal incidence. We observe a bistable behaviour and we demonstrate the generation of squeezing near the turning point of the bistability curve. The confined pillar geometry allows for a larger amount of squeezing than planar microcavities due to the discrete energy levels protected from excess noise. By analysing the noise of the emitted light, we obtain a measured intensity squeezing of 20.3%, inferred to be 35.8% after corrections.

Suggested Citation

  • T. Boulier & M. Bamba & A. Amo & C. Adrados & A. Lemaitre & E. Galopin & I. Sagnes & J. Bloch & C. Ciuti & E. Giacobino & A. Bramati, 2014. "Polariton-generated intensity squeezing in semiconductor micropillars," Nature Communications, Nature, vol. 5(1), pages 1-7, May.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms4260
    DOI: 10.1038/ncomms4260
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