Author
Listed:
- Alexandros Stavrinadis
(ICFO-Institut de Ciències Fotòniques)
- Arup K. Rath
(ICFO-Institut de Ciències Fotòniques)
- F. Pelayo García de Arquer
(ICFO-Institut de Ciències Fotòniques)
- Silke L. Diedenhofen
(ICFO-Institut de Ciències Fotòniques)
- César Magén
(Laboratorio de Microscopías Avanzadas (LMA), Universidad de Zaragoza)
- Luis Martinez
(ICFO-Institut de Ciències Fotòniques)
- David So
(ICFO-Institut de Ciències Fotòniques)
- Gerasimos Konstantatos
(ICFO-Institut de Ciències Fotòniques)
Abstract
Colloidal quantum dots have emerged as a material platform for low-cost high-performance optoelectronics. At the heart of optoelectronic devices lies the formation of a junction, which requires the intimate contact of n-type and p-type semiconductors. Doping in bulk semiconductors has been largely deployed for many decades, yet electronically active doping in quantum dots has remained a challenge and the demonstration of robust functional optoelectronic devices had thus far been elusive. Here we report an optoelectronic device, a quantum dot homojunction solar cell, based on heterovalent cation substitution. We used PbS quantum dots as a reference material, which is a p-type semiconductor, and we employed Bi-doping to transform it into an n-type semiconductor. We then combined the two layers into a homojunction device operating as a solar cell robustly under ambient air conditions with power conversion efficiency of 2.7%.
Suggested Citation
Alexandros Stavrinadis & Arup K. Rath & F. Pelayo García de Arquer & Silke L. Diedenhofen & César Magén & Luis Martinez & David So & Gerasimos Konstantatos, 2013.
"Heterovalent cation substitutional doping for quantum dot homojunction solar cells,"
Nature Communications, Nature, vol. 4(1), pages 1-7, December.
Handle:
RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3981
DOI: 10.1038/ncomms3981
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